Direct observation of anisotropic step activity on GaAs(001)

被引：21

作者：

Bell, GR

Jones, TS ^{[1
]}

Joyce, BA

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat, London SW7 2AY, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[3] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat, London SW7 2BZ, England

[4] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

来源：

SURFACE SCIENCE | 1999年 / 429卷 / 1-3期

关键词：

diffusion and migration; gallium arsenide; molecular beam epitaxy; nucleation; reflection high energy electron diffraction (RHEED); scanning tunneling microscopy; vicinal single crystal surfaces;

D O I：

10.1016/S0039-6028(99)00413-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunnelling microscopy has been used to study the differences between A-type and B-type atomic steps on vicinal GaAs(001) surfaces miscut 1 degrees towards either (111)A or (111)B. Two situations involving mass transport at the surface have been considered: sub-monolayer homoepitaxial growth and the phase transition from the (2 x 4) to c(4 x 4) surface reconstruction. In both cases, B-type steps are found to be more favourable as sites for the growth of new material and hence have a stronger influence on the overall surface morphology than A-type steps. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：L492 / L496

页数：5

共 15 条

[1] ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS [J].