Nanoscale effects of arsenic kinetics on GaAs(001)-(2x4) homoepitaxy

被引：20

作者：

Bell, GR

Itoh, M

Jones, TS ^{[1
]}

Joyce, BA

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2BZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

来源：

SURFACE SCIENCE | 1999年 / 423卷 / 2-3期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium arsenide; molecular beam epitaxy; surface kinetics; surface reconstruction;

D O I：

10.1016/S0039-6028(99)00089-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The early stages of homoepitaxy on the GaAs (001)-(2 x 4) surface have been studied by scanning tunnelling microscopy (STM). Detailed island statistics have been obtained from STM images and show a clear dependence on both the arsenic species used and the incident arsenic flux. These results are explained by considering the effects of the macroscopic arsenic kinetics (As-2 and As-4) on island nucleation and growth at the nanometre scale. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L280 / L284

页数：5

共 9 条

[1] Nucleation and growth of islands on GaAs surfaces [J].