Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

被引:20
作者
Smith, SR [1 ]
Evwaraye, AO [1 ]
Mitchel, WC [1 ]
机构
[1] MLPO,WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1063/1.360944
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have examined the temperature dependence of the barrier height of Al, Ag, Au, and W metal-semiconductor contacts on n-type 6H-SiC, and Al and Ag metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the reverse biased capacitance-voltage characteristics of the contacts at temperatures ranging from 300 to 670 K. The measurements were made at 1 MHz. These measurements were compared to the behavior predicted by standard models. All the diodes displayed a negative temperature dependence on n-type SiC, and a positive temperature dependence on p-type SiC. The temperature coefficient is related to the electronegativity of the metal by linear expression.
引用
收藏
页码:301 / 304
页数:4
相关论文
共 21 条
[1]   SHOT NOISE IN SILICON SCHOTTKY BARRIER DIODES [J].
COWLEY, AM ;
ZETTLER, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :761-&
[2]   EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].
CROWELL, CR ;
SZE, SM ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&
[3]   ELECTRONEGATIVITIES OF THE ELEMENTS [J].
GORDY, W ;
THOMAS, WJO .
JOURNAL OF CHEMICAL PHYSICS, 1956, 24 (02) :439-444
[4]  
HENISCH HK, 1989, SEMICONDUCTOR CONTAC, P25
[5]   ELECTRONIC-STRUCTURE OF GE AND DIAMOND SCHOTTKY BARRIERS [J].
IHM, J ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1978, 18 (08) :4172-4180
[6]   FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].
KURTIN, S ;
MCGILL, TC ;
MEAD, CA .
PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+
[7]   THEORY OF SEMICONDUCTOR SURFACE-STATES AND METAL-SEMICONDUCTOR INTERFACES [J].
LOUIE, SG ;
CHELIKOWSKY, JR ;
COHEN, ML .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :790-797
[8]   The nature of the chemical bond IV The energy of single bonds and the relative electronegativity of atoms [J].
Pauling, L .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1932, 54 :3570-3582
[9]   ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC [J].
PENSL, G ;
CHOYKE, WJ .
PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :264-283
[10]   TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL/ALGAAS METAL-SEMICONDUCTOR JUNCTIONS [J].
REVVA, P ;
LANGER, JM ;
MISSOUS, M ;
PEAKER, AR .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :416-425