Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN

被引：30

作者：

Jang, HW ^{[1
]}

Urbanek, W ^{[1
]}

Yoo, MC ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

Nickel oxide - Ruthenium compounds - Ohmic contacts - Light transmission - Schottky barrier diodes - III-V semiconductors;

D O I：

10.1063/1.1474609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O-2 atmosphere. A low resistivity of 4.5x10(-5) Omega cm(2) and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Angstrom)/Ni (50 Angstrom) contact. The RuO2 formed on p-type GaN played a role in reducing the effective Schottky barrier height for injection of holes and NiO layer produced on the RuO2 acted as a diffusion barrier for the outdiffusion of released Ga and N atoms, resulting in the reduction of the contact resistivity as well as the enhancement of light transmission. (C) 2002 American Institute of Physics.

引用

页码：2937 / 2939

页数：3

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