Electromigration resistance of sputtered silver lines using different patterning techniques

被引:26
作者
Hauder, M [1 ]
Hansch, W [1 ]
Gstöttner, J [1 ]
Schmitt-Landsiedel, D [1 ]
机构
[1] Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany
关键词
Ag-metallization; sputtering; patterning; etching; electromigration; electromigration resistance;
D O I
10.1016/S0167-9317(01)00580-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electromigration was investigated for sputtered Ag lines patterned by wet etching or by a novel hybrid etching technique. This new patterning technique works in two steps. After employing an oxygen plasma in the first step, a hydrogen peroxide solution is used in the second step. This technique shows an almost anisotropic etching behavior in contrast to the investigated wet etching techniques. The hybrid etched patterns were found to have an increased lifetime with up to about a threefold value in comparison to the best wet etched Ag lines. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:51 / 57
页数:7
相关论文
共 9 条
[1]   Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient [J].
Alford, TL ;
Adams, D ;
Laursen, T ;
Ullrich, BM .
APPLIED PHYSICS LETTERS, 1996, 68 (23) :3251-3253
[2]  
ARNAUD L, 1999, IEEE INT REL PHYS S, V2
[3]  
EDELSTEIN D, 1997, INT EL DEV M WASH DC
[4]   Scaling properties and electromigration resistance of sputtered Ag metallization lines [J].
Hauder, M ;
Gstöttner, J ;
Hansch, W ;
Schmitt-Landsiedel, D .
APPLIED PHYSICS LETTERS, 2001, 78 (06) :838-840
[5]   Silver metallization for advanced interconnects [J].
Manepalli, R ;
Stepaniak, F ;
Bidstrup-Allen, SA ;
Kohl, PA .
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 1999, 22 (01) :4-8
[6]   Reactive ion etch of patterned and blanket silver thin films in Cl2/O2 and O2 glow discharges [J].
Nguyen, P ;
Zeng, YX ;
Alford, TL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :2204-2209
[7]   A NEW ELECTROMIGRATION TESTING TECHNIQUE FOR RAPID STATISTICAL EVALUATION OF INTERCONNECT TECHNOLOGY [J].
THOMPSON, CV ;
CHO, J .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :667-668
[8]  
VENKATESAN S, 1997, INT EL DEV M WASH DC
[9]   Formation of aluminum oxynitride diffusion barriers for Ag metallization [J].
Wang, Y ;
Alford, TL .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :52-54