Growth mechanism during silicon epitaxy by photochemical vapor deposition at low temperatures

被引：7

作者：

Abe, K ^{[1
]}

Watahiki, T ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

low-temperature silicon epitaxy; photo-CVD; gas-phase reaction model; surface-reaction model; hydrogen surface-coverage ratio;

D O I：

10.1143/JJAP.38.3622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth mechanism of Si epitaxial film at low temperatures on Si(100) by photochemical vapor deposition (photo-CVD) is analyzed theoretically by using reaction models both in the gas phase and on the surface. We discuss three surface reactions: the growth of Si from SiH3 radicals, the dangling bond termination by atomic hydrogen and the abstraction of bonding hydrogen by SiH3 radicals. The parameters of the surface-reaction model are estimated from the experimental results, assuming that the film structure is determined by the hydrogen surface-coverage ratio "theta". The theoretical analysis explains well the experimental results of the Si films grown under various conditions.

引用

页码：3622 / 3627

页数：6

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