Study of interfacial point defects by ballistic electron emission microscopy

被引：50

作者：

Meyer, T

vonKanel, H

机构：

[1] Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich-Hönggerberg, Zürich

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.78.3133

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic electron emission microscopy has been used to study individual point defects, which are located at the CoSi2/Si(111) interface of thin (similar to 30 Angstrom) silicide films sown epitaxially an silicon substrates by molecular beam epitaxy. Clear evidence for trapping of point defects at dislocations is presented. The lateral distribution of the interfacial point defects is explained in terms of diffusion during an annealing step in the growth process.

引用

页码：3133 / 3136

页数：4

共 22 条

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