Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy

被引：14

作者：

Dobaczewski, L

Goscinski, K

Zytkiewicz, ZR

Nielsen, KB

Rubaldo, L

Andersen, O

Peaker, AR

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Univ Manchester, Inst Sci & Technol, Ctr Elect Mat, Manchester M60 1QD, Lancs, England

[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus, Denmark

[4] High Field Magnet Lab, MPI, CNRS, F-38046 Grenoble, France

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.65.113203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown that the divacancy in silicon in the diamagnetic doubly negative charge state has a static trigonal symmetry with inward breathing mode lattice relaxation. There is no measurable Jahn-Teller effect, unlike other charge states of the defect. This conclusion has been drawn from an analysis of the piezoscopic characteristics of the complex derived from high-resolution (Laplace) deep-level transient spectroscopy.

引用

页码：1 / 4

页数：4

共 18 条

[1]

[Anonymous], SOLID STATE PHYS

[2] The divacancy in silicon and diamond [J].