THERMAL EMISSION OF HOLES FROM DEFECTS IN UNIAXIALLY STRESSED P-TYPE SILICON

被引：5

作者：

NOLTE, DD

HALLER, EE

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9857

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9857 / 9869

页数：13

共 32 条

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