The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes

被引：14

作者：

Monakhov, A ^{[1
]}

Krier, A ^{[1
]}

Sherstnev, VV ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.

引用

页码：480 / 484

页数：5

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