Uncooled 4.2 mu m light emitting diodes based on InAs0.91Sb0.09/GaSb grown by LPE

被引：15

作者：

Mao, Y

Krier, A

机构：

[1] Adv. Materials and Photonics Group, School of Physics and Chemistry, Lancaster University

来源：

OPTICAL MATERIALS | 1996年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0925-3467(96)00011-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The report describes the epitaxial growth and fabrication of efficient room temperature InAs0.91Sb0.09 semiconductor light-emitting diodes operating in the infrared wavelength region at 4.2 mu m. These devices have attracted much recent interest as viable infrared light sources for use in carbon dioxide detection. A study of the LPE growth of lattice matched InAs1-xSbx onto GaSb substrates from Sb-solution by the supercooled growth method is described. The electrical transport properties and photoluminescence are presented. The n-i-p-InAs0.91Sb0.09/P-GaSb light emitting diodes (LEDs) are studied and the quantum efficiency is discussed.

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页码：55 / 61

页数：7

相关论文

共 39 条

[1] LIQUID-PHASE EPITAXIAL-GROWTH OF STEPWISE-GRADED INAS1-XSBX-INAS HETEROSTRUCTURES [J].

ANDREWS, AM ;

CHEUNG, DT ;

GERTNER, ER ;

LONGO, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :961-963

[2] DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

BESIKCI, C ;

CHOI, YH ;

LABEYRIE, G ;

BIGAN, E ;

RAZEGHI, M ;

COHEN, JB ;

CARSELLO, J ;

DRAVID, VP .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :5820-5828

[3]

Bondar' S. A., 1982, Soviet Physics - Technical Physics, V27, P215

[4] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS [J].

BUBULAC, LO ;

ANDREWS, AM ;

GERTNER, ER ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :734-736

[5] BACKSIDE-ILLUMINATED INAS1-XSBX-INAS NARROW-BAND PHOTODETECTORS [J].

CHEUNG, DT ;

ANDREWS, AM ;

GERTNER, ER ;

WILLIAMS, GM ;

CLARKE, JE ;

PASKO, JG ;

LONGO, JT .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :587-589

[6] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD [J].

CHIANG, PK ;

BEDAIR, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2422-2426

[7] GROWTH OF INASSB ALLOY AND INASSB/GASB SUPERLATTICE LATTICE MATCHED TO (100) GASB BY MOLECULAR-BEAM EPITAXY [J].

CHIU, TH ;

TSANG, WT ;

DITZENBERGER, JA ;

CHU, SNG ;

VANDERZIEL, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :205-207

[8] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

CHYI, JI ;

KALEM, S ;

KUMAR, NS ;

LITTON, CW ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1092-1094

[9] GROWTH AND STRUCTURAL CHARACTERIZATION OF EMBEDDED INASSB ON GAAS-COATED PATTERNED SILICON BY MOLECULAR-BEAM EPITAXY [J].

DEBOECK, J ;

DOBBELAERE, W ;

VANHELLEMONT, J ;

MERTENS, R ;

BORGHS, G .

APPLIED PHYSICS LETTERS, 1991, 58 (09) :928-930

[10]

DERZIEL JPV, 1985, APPL PHYS LETT, V47, P1139

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