2.5μm light-emitting diodes in InAs0.36Sb0.20P0.44/InAs for HF detection

被引：17

作者：

Krier, A ^{[1
]}

Mao, Y ^{[1
]}

机构：

[1] Univ Lancaster, Sch Phys & Chem, Adv Mat & Photon Grp, Lancaster LA1 4YB, England

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1997年 / 144卷 / 05期

关键词：

light-emitting diodes; HF gas detection;

D O I：

10.1049/ip-opt:19971390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quaternary alloy InAs1-x-ySbxPy, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of pollutant/nuisance gases in the 2-5 mu m region of the spectrum. The authors report on the growth of InAs0.36Sb0.20P0.44 by liquid phase epitaxy (LPE) onto InAs substrates. The material exhibits good luminescence efficiency and has excellent optical characteristics, making it suitable for use in optoelectronic devices. Surface-emitting LEDs were fabricated and efficient room temperature infrared emission at 2.5 mu m was obtained from homojunction p-i-n diodes. These sources can be effectively used as the basis of an optical sensor for the environmental monitoring of HF gas at 2.5 mu m in various applications.

引用

页码：355 / 359

页数：5

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