共 47 条
- [31] Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05): : 3263 - 3269
- [32] Murarka SP, 1996, SOLID STATE TECHNOL, V39, P83
- [33] Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics [J]. 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 166 - 172
- [35] Stress-induced voiding under vias connected to wide Cu metal leads [J]. 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 312 - 321
- [36] Oshima T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P757, DOI 10.1109/IEDM.2002.1175948
- [37] Reimbold G, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P745, DOI 10.1109/IEDM.2002.1175945
- [38] *SEM IND ASS, INT TECHN ROADM SEM
- [39] Advanced wiring RC delay issues for sub-0.25-micron generation CMOS [J]. PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 1998, : 62 - 64
- [40] Sullivan TD, 1999, AIP CONF PROC, V491, P39, DOI 10.1063/1.59922