Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

被引：5

作者：

Feick, H

Fretwurst, E

Moll, M

Lindstrom, G

机构：

[1] t Hamburg, 22761 Hamburg

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 03期

关键词：

D O I：

10.1109/23.603760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors. In conjunction with deep level parameters obtained from an I-DLTS study and changes observed in the effective doping concentration and in the leakage current after exposure to high doses of Co-60-gammas, new insight is gained into the radiation induced device deterioration and the corresponding annealing behavior.

引用

页码：825 / 833

页数：9

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