LEAKAGE CURRENT, ANNEALING, AND DEEP DEFECT PRODUCTION STUDIES IN NEUTRON-IRRADIATED N-TYPE SI-DETECTORS

被引：12

作者：

BORCHI, E

MACII, R

LEROY, C

MANOUKIANBERTRAND, C

FURETTA, C

PALUDETTO, R

PENSOTTI, S

RANCOITA, PG

RATTAGGI, M

SEIDMAN, A

VISMARA, L

机构：

[1] IST NAZL FIS NUCL,FLORENCE,ITALY

[2] NATL INST NUCL PHYS,MILAN,ITALY

[3] UNIV MONTREAL,MONTREAL H3C 3J7,QUEBEC,CANADA

[4] UNIV ROME,I-00100 ROME,ITALY

[5] TEL AVIV UNIV,IL-69978 TEL AVIV,ISRAEL

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 301卷 / 02期

关键词：

D O I：

10.1016/0168-9002(91)90461-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A detailed study of neutron irradiated n-type silicon detectors was carried out including leakage current measurements after first and second irradiation, annealing procedures optimization, deep level transient spectroscopy (DLTS), and thermally stimulated currents (TSC) analyses of the produced defects in the bulk of the detectors.

引用

页码：215 / 218

页数：4

共 12 条

[1] DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS OF MAJORITY CARRIER TRAPS IN NEUTRON-IRRADIATED N-TYPE SILICON DETECTORS [J].