THERMALLY STIMULATED CURRENT MEASUREMENTS ON SILICON JUNCTIONS PRODUCED BY IMPLANTATION OF LOW-ENERGY BORON IONS

被引：21

作者：

MULLER, JC

STUCK, R

BERGER, R

SIFFERT, P

机构：

[1] UNIV LOUIS PASTEUR,LAB PHYS RAYONNEMENTS & ELECTR NUCL,67037 STRASBOURG,FRANCE

[2] CTR RECH NUCL,STRASBOURG,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 12期

关键词：

D O I：

10.1016/0038-1101(74)90007-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1293 / 1297

页数：5

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