Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

被引：7

作者：

Corradini, V

Gavioli, L

Mariani, C

机构：

[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy

[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

SURFACE SCIENCE | 1999年 / 430卷 / 1-3期

关键词：

bismuth; metal-semiconductor interfaces; silicon; surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(99)00426-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：126 / 136

页数：11

共 42 条

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