The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO

被引：58

作者：

Auret, FD ^{[1
]}

Goodman, SA

Hayes, M

Legodi, MJ

van Laarhoven, HA

Look, DC

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] USAF, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 40期

关键词：

D O I：

10.1088/0953-8984/13/40/315

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the electrical and defect characterization of Au Schottky diodes formed on single-crystal ZnO, before and after irradiating with high-energy (1.8 MeV) protons. Prior to bombardment we observed that several electron traps (E1-E4), with energies between 0.10 and 0.57 eV below the conduction band, are present in the ZnO. High-energy proton bombardment introduces two electron traps (Ep1 and Ep2), with extremely low introduction rates (eta) of 2.4 and 1.9 cm(-1), respectively. Schottky barrier properties such as the reverse leakage current deteriorated from I x 10(-9) A for an unirradiated diode to 1 X 10(-6) A after bombarding it with a dose of 4.2 x 10(14) cm(-2) protons. Compared to GaN we found that ZnO is remarkably resistant to high-energy proton bombardment.

引用

页码：8989 / 8999

页数：11