Millions of cantilevers for atomic force microscopy

被引：34

作者：

Kawakatsu, H ^{[1
]}

Saya, D ^{[1
]}

Kato, A ^{[1
]}

Fukushima, K ^{[1
]}

Toshiyoshi, H ^{[1
]}

Fujita, H ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2002年 / 73卷 / 03期

关键词：

D O I：

10.1063/1.1448137

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Millions of single-crystal silicon cantilevers were fabricated by anisotropic etching of silicon by KOH. They could be tailored to measure from 500 nm to 100 mum in length and from 30 to 100 nm in thickness. Since the tips and the cantilevers were formed by a combination of crystal-line facets, they had very high uniformity, well-defined shape, and size. The density of the cantilevers was over 1 mil cantilevers per square centimeter. Typical mechanical characteristics of cantilevers measuring a few microns in length were spring constant a few N/m, natural frequency around 10 MHz, Q factor 5 in air, and 10(4) in vacuum. The natural frequency of cantilevers within the same row differed by 0.01%. Displacement measurement of the cantilever from the back surface of the silicon substrate by an infrared Fizeau interferometer had a visibility of 0.1. (C) 2002 American Institute of Physics.

引用

页码：1188 / 1192

页数：5

共 24 条

[1] ATOMIC FORCE MICROSCOPE
BINNIG, G
QUATE, CF
GERBER, C
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 930 - 933
[2] Fabrication of nanoelectromechanical systems in single crystal silicon using silicon on insulator substrates and electron beam lithography
Carr, DW
Craighead, HG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2760 - 2763
[3] Integration of through-wafer interconnects with a two-dimensional cantilever array
Chow, EM
Soh, HT
Lee, HC
Adams, JD
Minne, SC
Yaralioglu, G
Atalar, A
Quate, CF
Kenny, TW
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 2000, 83 (1-3) : 118 - 123
[4] VLSI-NEMS chip for parallel AFM data storage
Despont, M
Brugger, J
Drechsler, U
Dürig, U
Häberle, W
Lutwyche, M
Rothuizen, H
Stutz, R
Widmer, R
Binnig, G
Rohrer, H
Vettiger, P
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 2000, 80 (02) : 100 - 107
[5] Development of a versatile atomic force microscope within a scanning electron microscope
Fukushima, K
Saya, D
Kawakatsu, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6B): : 3747 - 3749
[6] NEW FABRICATION METHOD AND ELECTRICAL CHARACTERISTICS OF CONICAL SILICON FIELD EMITTERS
HASHIGUCHI, G
MIMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (03): : 1493 - 1497
[7] FABRICATION OF SILICON QUANTUM WIRES USING SEPARATION BY IMPLANTED OXYGEN WAFER
HASHIGUCHI, G
MIMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1649 - L1650
[8] Fabrication and characterization of cantilevers with integrated sharp tips and piezoelectric elements for actuation and detection for parallel AFM applications
Indermuhle, PF
Schurmann, G
Racine, GA
deRooij, NF
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1997, 60 (1-3) : 186 - 190
[9] Strength measurement and calculations on silicon-based nanometric oscillators for scanning force microcopy operating in the gigahertz range
Kawakatsu, H
Toshiyoshi, H
Saya, D
Fukushima, K
Fujita, H
[J]. APPLIED SURFACE SCIENCE, 2000, 157 (04) : 320 - 325
[10] A silicon based nanometric oscillator for scanning force microcopy operating in the 100 MHz range
Kawakatsu, H
Toshiyoshi, H
Saya, D
Fujita, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6B): : 3962 - 3965

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