Impact of photoacid generator structure on DUV resist performance

被引：23

作者：

Cameron, JF ^{[1
]}

Ablaza, SL ^{[1
]}

Xu, GY ^{[1
]}

Yueh, W ^{[1
]}

机构：

[1] Shipley Co Inc, Res & Dev Labs, Marlborough, MA 01752 USA

来源：

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷

关键词：

photoacid generator; chemically amplified resists; deep UV resists; lithography; dissolution rate; acid efficiency;

D O I：

10.1117/12.350268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural influence of photoacid generators on DUV resist performance is investigated in both high and low activation energy resist systems. The lithographic behavior of the photoacid generator is considered in terms of the structure of the photogenerated acid and the light sensitive chromophore. Firstly, the lithographic impact of the photogenerated acid is investigated in terms of acid strength and acid size in resists optimized for high and low temperature processing, respectively Dissolution kinetics, contrast curve data and absorbance data are presented for a series of high and low activation energy resists in which the structure of the photogenerated acid is systematically varied. The results of these studies are discussed in terms of the photogenerated acid, emphasizing the impact of acid strength and size on lithographic performance and resist dissolution rare kinetics for each resist platform. Secondly, the structural influence of the light sensitive FAG chromophore is investigated by comparing the lithographic performance and acid generating efficiency of iodonium and sulfonium salt PAGs. Lastly, correlations of lithographic performance and dissolution rare kinetics are probed in terms of resist type thigh and low temperature systems and FAG structure.

引用

页码：785 / 799

页数：15

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