Synthesis of homogeneous pentenary chalcopyrite alloys with a classical two-step growth process

被引：9

作者：

Dhlamini, FD ^{[1
]}

Alberts, V ^{[1
]}

机构：

[1] Rand Afrikaans Univ, Dept Phys, Sydney, NSW 2006, Australia

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

alloys; semiconductors; thin films; x-ray diffraction; photoelectron spectroscopy;

D O I：

10.1016/j.jpcs.2005.09.009

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Homogeneous single-phase Cu(In0.75Ga0.25)(Se1-ySy)(2) chalcopyrite alloys were prepared by a novel two-step growth process. CuIn0.75Ga0.25 precursors were deposited by DC magnetron sputtering and the subsequent reaction processes in a reactive H2Se/Ar/H2S atmosphere was optimized to prevent the formation and separation of stable ternary phases. X-ray diffraction (XRD) analysis of these films revealed characteristic chalcopyrite peaks with a high degree of symmetry, indicative of homogeneous rather than compositionally graded material. The lattice parameters of the single-phase Cu(In0.75Ga0.25)(Se1-ySy)(2) pentenary alloys decreased linearly with an increase in the S/(S+Se) ratio in accordance with Vegard's law. X-ray photoelectron spectroscopy (XPS) depth profiling confirmed the in-depth compositional uniformity of the pentenary alloys, prepared under optimized selenization/sulfurization conditions. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1880 / 1882

页数：3

共 11 条

[1] X-ray analysis and band gap measurement of CuIn1-xGaxSe2 films [J].

Al-Bassam, AAI .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 62 (02) :175-178

[2] Material and device properties of single-phase Cu(In,Ga)(Se,S)2 alloys prepared by selenization/sulfurization of metallic alloys [J].

Alberts, V ;

Titus, J ;

Birkmire, RW .

THIN SOLID FILMS, 2004, 451 :207-211

[3] Deposition of single-phase Cu(In,Ga)Se2 thin films by a novel two-stage growth technique [J].

Alberts, V .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) :65-69

[4] Band gap engineering in polycrystalline Cu(In,Ga)(Se,S)2 chalcopyrite thin films [J].

Alberts, V .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 107 (02) :139-147

[5] Formation and analysis of graded CuIn(Se1-ySy)2 films [J].

Engelmann, M ;

McCandless, BE ;

Birkmire, RW .

THIN SOLID FILMS, 2001, 387 (1-2) :14-17

[6]

GADIKAS A, 2000, NUCL INSTRUM METH B, V164, P868

[7] Phases, morphology, and diffusion in CuInxGa1-xSe2 thin films [J].

Marudachalam, M ;

Birkmire, RW ;

Hichri, H ;

Schultz, JM ;

Swartzlander, A ;

AlJassim, MM .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :2896-2905

[8] Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber [J].

Nagoya, Y ;

Kushiya, K ;

Tachiyuki, M ;

Yamase, O .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 67 (1-4) :247-253

[9] Improved Cu(In,Ga)(S,Se)(2) thin film solar cells by surface sulfurization [J].

Nakada, T ;

Ohbo, H ;

Watanabe, T ;

Nakazawa, H ;

Matsui, M ;

Kunioka, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :285-290

[10] CIGSSe thin film PV modules:: from fundamental investigations to advanced performance and stability [J].

Palm, J ;

Probst, V ;

Stetter, W ;

Toelle, R ;

Visbeck, S ;

Calwer, H ;

Niesen, T ;

Vogt, H ;

Hernández, O ;

Wendl, M ;

Karg, FH .

THIN SOLID FILMS, 2004, 451 :544-551

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