CMOS BQJ detector chip with integrated charge-amplifiers for fluorescence measurements

被引:8
作者
Courcier, Thierry [1 ,2 ,3 ,5 ]
Goulart, Mariana [1 ,2 ,3 ,4 ]
Pittet, Patrick [1 ,2 ,3 ]
de Lima Monteiro, Davies W. [4 ]
Charette, Paul G. [5 ]
Aimez, Vincent [5 ]
Lu, Guo-Neng [1 ,2 ,3 ]
机构
[1] Univ Lyon, CNRS, UMR5270, INL, F-69003 Lyon, France
[2] Univ Lyon 1, F-69622 Villeurbanne, France
[3] Inst Natl Sci Appl, F-69621 Villeurbanne, France
[4] Univ Fed Minas Gerais, Escola Engn, DEE, OptMA Lab, Pampulha, Brazil
[5] Univ Sherbrooke, CNRS, UMI, LN2, Sherbrooke, PQ J1K 2R1, Canada
关键词
Photodetector; Buried quad junction; APS; Fluorescence; Quantum-dots; JUNCTION PHOTODETECTOR; SENSITIVITY; SYSTEM;
D O I
10.1016/j.snb.2013.08.021
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A CMOS buried quad-junction (BQJ) photodetector chip was designed for quantitative analysis in multi-labeling fluorescence detection applications. The chip integrates four-channel charge preamplifiers associated to the multi-output BQJ detector. The chip was tested for noise analysis and evaluation of the amplifiers' characteristics. It has a sensitivity of 21.2V/lxs at 555 nm and a detectivity D* up to 3 x 10(13) cm Hz(1/2)W-1. A test of the chip for a two-label fluorescence case was performed using a mixture of quantum dots in a priori unknown proportions. Good agreement was obtained between the modeled and measured results. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:288 / 294
页数:7
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