Optimization of fully-implanted NPN's for high-frequency operation

被引：19

作者：

Nanver, LK

Goudena, EJG

vanZeijl, HW

机构：

[1] Delft Institute of Microelectronics and Submicron Technology, DIMES 1C Process Research Sector, Delft University of Technology

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/16.502142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.

引用

页码：1038 / 1040

页数：3

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