Relaxed silicon-germanium on insulator substrate by layer transfer

被引：15

作者：

Cheng, ZY ^{[1
]}

Taraschi, G

Currie, MT

Leitz, CW

Lee, ML

Pitera, A

Langdo, TA

Hoyt, JL

Antoniadis, DA

Fitzgerald, EA

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 12期

关键词：

relaxed Si1-xGex-on-insulator; UHVCVD; graded buffer; bonding; smart-cut;

D O I：

10.1007/s11664-001-0182-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

引用

收藏

页码：L37 / L39

页数：3

相关论文

共 10 条

[1] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].

BRUEL, M .

ELECTRONICS LETTERS, 1995, 31 (14) :1201-1202

[2]

Bruel M., 1995, P IEEE INT SOI C, P178

[3] Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates [J].

Brunner, K ;

Dobler, H ;

Abstreiter, G ;

Schafer, H ;

Lustig, B .

THIN SOLID FILMS, 1998, 321 :245-250

[4] SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen [J].

Fukatsu, S ;

Ishikawa, Y ;

Saito, T ;

Shibata, N .

APPLIED PHYSICS LETTERS, 1998, 72 (26) :3485-3487

[5] High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate [J].

Huang, FY ;

Chu, MA ;

Tanner, MO ;

Wang, KL ;

U'Ren, GD ;

Goorsky, MS .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2680-2682

[6] SiGe-on-insulator substrate using SiGe alloy grown Si(001) [J].

Ishikawa, Y ;

Shibata, N ;

Fukatsu, S .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :983-985

[7] RELAXATION OF SIGE THIN-FILMS GROWN ON SI/SIO2 SUBSTRATES [J].

LEGOUES, FK ;

POWELL, A ;

IYER, SS .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7240-7246

[8]

Maleville C, 1996, ELEC SOC S, V96, P34

[9] Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology [J].

Mizuno, T ;

Takagi, S ;

Sugiyama, N ;

Satake, H ;

Kurobe, A ;

Toriumi, A .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (05) :230-232

[10] NEW APPROACH TO THE GROWTH OF LOW DISLOCATION RELAXED SIGE MATERIAL [J].

POWELL, AR ;

IYER, SS ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1994, 64 (14) :1856-1858