Influence of the rapid thermal annealing in vacuum on the XPS characteristics of thin SiO2

被引：5

作者：

Atanassova, E

Paskaleva, A

机构：

[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia

来源：

APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 04期

关键词：

D O I：

10.1016/S0169-4332(96)00556-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of rapid thermal annealing (1073-1473 K) in vacuum on thin (11 nm) thermal SiO2 layers on Si has been studied by means of X-ray photoelectron spectroscopy. The results show that the RTA slightly affects the properties of the Si-SiO2 system up to a temperature of 1473 K and the effect is in the direction of obtaining a more perfect oxide structure. The stoichiometry of the layer, however, at the surface as well as in the bulk is not influenced by the annealing. The analysis of the data also shows that the spontaneous decomposition of the oxide and the pinholes formation most likely take place during the annealing at 1473 K. The results seem to rule out the formation of suboxides at this temperature.

引用

页码：359 / 367

页数：9

共 24 条

[1] AES AND PES STUDIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) FILMS [J].