Microstructural and ferroelectric properties of a chemical solution deposited epitaxial PbZr0.5Ti0.5O3 thin film on a SrRuO3/SrTiO3 substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 degrees C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure, The PZT thin film has the epitaxial orientational relationship of (001) [010](PZT) parallel to (001) [010](SRO) parallel to (001) [010](STO) with the substrate. The remnant (P-r) and saturation polarization (P-s,) density were measured to be P-r similar to 51.4 mu C/Cm-2 and P-s similar to 62.1 mu C/cm(2) at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 X 10(8) cycles.