Thin-film passivation by atomic layer deposition for organic field-effect transistors

被引：29

作者：

Jeon, Hayoung ^{[1
]}

Shin, Kwonwoo ^{[1
]}

Yang, Chanwoo ^{[1
]}

Park, Chan Eon ^{[1
]}

Park, Sang-Hee Ko ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Organ Elect Lab, Pohang 790784, South Korea

[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

关键词：

D O I：

10.1063/1.3000017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 degrees C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m(2)/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000017].

引用

页数：3

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