Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures

被引：7

作者：

Agui, A

Shin, S

Wu, C

Shiba, K

Inoue, K

机构：

[1] Univ Tokyo, Inst Solid State Phys, Synchrotron Radiat Lab, Tanashi, Tokyo 1880002, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670049, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.59.10792

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum 2p soft-x-ray emission and absorption spectra (XES and XAS) of a GaAs/AIAs/GaAs heterostructure semiconductor have been measured with high-energy resolution. The Al 2p XES shows a similar feature to that of AlxGa1-xAs alloys. Strong Al 2p core excitons have been observed in XAS, and attributed to the X- and L-like states in the conduction band. The XAS profile has changed depending on the incident angle of the excitation x rays. This dependence may relate to the symmetry of the exciton transitions. [S0163-1829(99)01208-4].

引用

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页码：10792 / 10795

页数：4

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