Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510

被引：110

作者：

Rozenberg, MJ ^{[1
]}

Inoue, IH

Sánchez, MJ

机构：

[1] Univ Paris 11, Phys Solides Lab, UMR 8502, F-91405 Orsay, France

[2] Univ Buenos Aires, FCEN, Dept Fis Juan Jose Giambiagi, RA-1428 Buenos Aires, DF, Argentina

[3] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan

[4] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2164917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.

引用

页码：1 / 3

页数：3

共 18 条

[1]

[Anonymous], 1999, DEVICES INTEGRATED C

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] Complexity in strongly correlated electronic systems [J].

Dagotto, E .

SCIENCE, 2005, 309 (5732) :257-262

[4] Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition [J].

Fors, R ;

Khartsev, SI ;

Grishin, AM .

PHYSICAL REVIEW B, 2005, 71 (04)

[5] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[6] Metal-insulator transitions [J].

Imada, M ;

Fujimori, A ;

Tokura, Y .

REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263

[7] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[8] Nonvolatile electrical bistability of organic/metal-nanocluster/organic system [J].

Ma, LP ;

Pyo, S ;

Ouyang, J ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1419-1421

[9] A first-order Mott transition in LixCoO2 [J].

Marianetti, CA ;

Kotliar, G ;

Ceder, G .

NATURE MATERIALS, 2004, 3 (09) :627-631

[10] First systematic band-filling control in organic conductors [J].

Mori, H ;

Kamiya, M ;

Haemori, N ;

Suzuki, H ;

Tanaka, S ;

Nishio, Y ;

Kajita, K ;

Moriyama, H .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (07) :1251-1260

← 1 2 →