Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells

被引:63
作者
Hirayama, H
Enomoto, Y
Kinoshita, A
Hirata, A
Aoyagi, Y
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Waseda Univ, Dept Chem Engn, Shinjuku Ku, Tokyo 1698555, Japan
[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
关键词
D O I
10.1063/1.1432112
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrated efficient ultraviolet (UV) photoluminescence (PL) with the wavelength ranging from 230 to 280 nm from AlxGa1-xN(AlN)/AlyGa1-yN multiquantum wells (MQWs) grown on SiC by metalorganic vapor phase epitaxy. We systematically investigated the PL intensity of the AlGaN-based MQWs with wide-band-gap AlGaN barriers as functions of QW thickness and Al content of barriers. Single-peak, efficient PL emission was obtained at 282-234 nm at 77 K from AlxGa1-xN(AlN)/AlyGa1-yN 5-layer MQWs with approximately 1.5-nm-thick active layers by changing the Al content of the AlxGa1-xN barriers from 53% to 100%. The efficiency of the deep-UV emission from AlGaN-based QWs was as high as that of blue emission from InGaN-based QWs at 77 K. (C) 2002 American Institute of Physics.
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页码:37 / 39
页数:3
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