100-nm node lithography with KrF?

被引：16

作者：

Fritze, M ^{[1
]}

Tyrrell, B ^{[1
]}

Astolfi, D ^{[1
]}

Yost, D ^{[1
]}

Davis, P ^{[1
]}

Wheeler, B ^{[1
]}

Mallen, R ^{[1
]}

Jarmolowicz, J ^{[1
]}

Cann, S ^{[1
]}

Liu, HY ^{[1
]}

Ma, M ^{[1
]}

Chan, D ^{[1
]}

Rhyins, P ^{[1
]}

Carney, C ^{[1
]}

Ferri, J ^{[1
]}

Blachowicz, BA ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Cambridge, MA 02139 USA

来源：

OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷

关键词：

optical lithography; phase-shift mask; proximity effect correction;

D O I：

10.1117/12.435719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results looking into the feasibility of 100-nm Node imaging using KrF, 248mn, exposure technology. This possibility is not currently envisioned by the 1999 ITRS Roadmap which lists 5 possible options for this 2005 Node, not including KrF. We show that double-exposure strong phase-shift, combined with two mask OPC, is capable of correcting the significant proximity effects present for 100-nm Node imaging at these low k(1) factors. We also introduce a new PSM Paradigm, dubbed "GRATEFUL", that can image aggressive 100-nm Node features without using OPC. This is achieved by utilizing an optimized "dense-only" imaging approach. The method also allows the re-use of a single PSM for multiple levels and designs, thus addressing the mask cost and turnaround time issues of concern in PSM technology.

引用

页码：191 / 204

页数：14

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