Strain characterization of polycrystalline diamond and silicon systems

被引：67

作者：

Anastassakis, E ^{[1
]}

机构：

[1] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 01期

关键词：

D O I：

10.1063/1.370723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phonon deformation potentials of polycrystalline diamond and silicon, derived through the Voigt-Reuss-Hill averaging technique, are used to establish the systematics of strain characterization of polycrystalline films, considering all possible stress configurations. The results are compared to Raman data from the literature. (C) 1999 American Institute of Physics. [S0021-8979(99)02913-8].

引用

页码：249 / 258

页数：10

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