Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer

被引：13

作者：

Yao, QJ ^{[1
]}

Li, DJ ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2005年 / 351卷 / 40-42期

基金：

高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1016/j.jnoncrysol.2005.08.014

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fabrication of thin film transistor (TFT) using rf sputtered ZnO as channel layer is described in this paper. Deposition condition of the ZnO channel layer is investigated. It is found that metal mesh shielding of the substrate and higher oxygen partial pressure help improve the on-off ratio of the device. Levinson's expression of drain current is successfully applied to the transfer character of the device. TFT described here would likely find its use in large area FPD to cooperate with display elements that need large current driven. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：3191 / 3194

页数：4

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