High power 4.6μm LEDs for CO detection grown by LPE

被引:15
作者
Krier, A [1 ]
Gao, H
Sherstnev, V
Yakovlev, Y
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[2] AF Ioffe Physicotech Inst, St Petersburg, Russia
关键词
D O I
10.1049/el:19991042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-power light-emitting diodes operating at 4.6 mu m with potential for use in an optical carbon monoxide sensor have been fabricated by liquid phase epitaxy (LPE) with a pulsed output power in excess of 1mW at room temperature. The InAs0.89Sb0.11 in the LED active region was purified using rare earth ion gettering of the growth solution during epitaxy.
引用
收藏
页码:1665 / 1667
页数:3
相关论文
共 8 条
[1]   High quality InAs grown by liquid phase epitaxy using gadolinium gettering [J].
Gao, HH ;
Krier, A ;
Sherstnev, VV .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (05) :441-445
[2]  
GAO HH, IN PRESS J PHYS D
[3]   2.5μm light-emitting diodes in InAs0.36Sb0.20P0.44/InAs for HF detection [J].
Krier, A ;
Mao, Y .
IEE PROCEEDINGS-OPTOELECTRONICS, 1997, 144 (05) :355-359
[4]   Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering [J].
Krier, A ;
Gao, HH ;
Sherstnev, VV .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8419-8422
[5]   Uncooled 4.2 mu m light emitting diodes based on InAs0.91Sb0.09/GaSb grown by LPE [J].
Mao, Y ;
Krier, A .
OPTICAL MATERIALS, 1996, 6 (1-2) :55-61
[6]   InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range [J].
Matveev, B ;
Zotova, N ;
Karandashov, S ;
Remennyi, M ;
Il'inskaya, N ;
Stus', N ;
Shustov, V ;
Talalakin, G ;
Malinen, J .
IEE PROCEEDINGS-OPTOELECTRONICS, 1998, 145 (05) :254-256
[7]   Powerful mid-infrared light emitting diodes for pollution monitoring [J].
Popov, AA ;
Sherstnev, VV ;
Yakovlev, YP ;
Baranov, AN ;
Alibert, C .
ELECTRONICS LETTERS, 1997, 33 (01) :86-88
[8]   Comparison of IR LED gas sensors with thermal source products [J].
Smith, SD ;
Vass, A ;
Bramley, P ;
Crowder, JG ;
Wang, CH .
IEE PROCEEDINGS-OPTOELECTRONICS, 1997, 144 (05) :266-270