Mechanisms of oxygen incorporation in indium-tin-oxide films deposited by laser ablation at room temperature

被引：28

作者：

Morales-Paliza, MA ^{[1
]}

Haglund, RF ^{[1
]}

Feldman, LC ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1481243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The use of O-18(2) as a background gas in pulsed-laser deposition (PLD) of indium-tin-oxide (ITO) films allows clear discrimination between the two oxygen sources in the films: target and background gas. A study of both stoichiometric and electrical properties of the ITO films in terms of the relative contributions of the two oxygen sources at different background-gas pressures is presented in this work. The film with lowest resistivity (similar to4x10(-4) Omega cm) incorporates 28% oxygen from the background gas as compared to the total oxygen in the film. This relatively strong oxygen incorporation from the background gas suggests a strong exchange rate between O-16 from the target and O-18 from the background gas in the "plume" phase of the PLD process. (C) 2002 American Institute of Physics.

引用

页码：3757 / 3759

页数：3

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