Effect of SiO2 incorporation on stability and work function of conducting MoO2

被引:22
作者
Liang, Y [1 ]
Tracy, C [1 ]
Weisbrod, E [1 ]
Fejes, P [1 ]
Theodore, ND [1 ]
机构
[1] Freescale Semicond Inc, Tempe, AZ 85284 USA
关键词
D O I
10.1063/1.2176859
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show the incorporation of different amounts of SiO2 in conducting MoO2 results in materials that have large vacuum work functions tunable by approximately 1 eV and improved thermal stability at elevated temperatures. Electrical measurements of MoSixOy/HfO2/SiOx/n-Si capacitors show an approximate 5.1 eV work function, suitable for p-channel metal-oxide-semiconductor devices. . Thickening of the interfacial SiOx layer was observed, however, after annealing the stack at higher temperatures in N-2. (c) 2006 American Institute of Physics.
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页数:3
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