Plasma immersion ion implantation for electronic materials

Plasma immersion ion implantation (PIII) is an emerging technology promising high dose-rate implantation and large-area processing compatibility. Innovations of this technique include: area-independent implantation time, concomitant deposition and implantation, and simple machine design and maintenance. This review summarizes the current understanding of PIII plasma dynamics, dosimetry, and electronic materials applications such as plasma doping for ultra-shallow junctions and high aspect ratio Si trenches, and subsurface synthesis of silicon-on-insulator materials.