2-STEP DOPING USING EXCIMER LASER IN BORON DOPING OF SILICON

被引：20

作者：

AKANE, T

NII, T

MATUMOTO, S

机构：

[1] Department of Electrical Engineering, Keio University, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

BORON DOPING OF SILICON; EXCIMER LASER DOPING; SHALLOW JUNCTION; DIFFUSION COEFFICIENT IN LIQUID SI; DEPOSITION OF DOPANT FILM;

D O I：

10.1143/JJAP.31.4437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-step doping method consisting of the deposition of dopant films and the incorporation of dopant atoms using excimer laser has been studied in boron doping of silicon. These processes are carried out in the same chamber successively. Sheet resistance can be varied widely by changing both the number and the energy density of the depositing laser pulses. In this method, dopants diffuse in the melted silicon from a fixed total dopant source with a simple Gaussian distribution when the number of melting pulses is small. The diffusion coefficient of B in liquid Si is determined experimentally.

引用

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页码：4437 / 4440

页数：4

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