Fabrication of induced two-dimensional hole systems on (311)A GaAs

被引：29

作者：

Clarke, WR

Micolich, AP

Hamilton, AR ^{[1
]}

Simmons, MY

Muraki, K

Hirayama, Y

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2163998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p(+)-GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs/GaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems. (c) 2006 American Institute of Physics.

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页数：6

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