Two-dimensional electron gas formed in a back-gated undoped heterostructure

被引：47

作者：

Hirayama, Y ^{[1
]}

Muraki, K ^{[1
]}

Saku, T ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 14期

关键词：

D O I：

10.1063/1.121171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a back-gate operation, a high-quality two-dimensional electron gas (2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3 x 10(6) cm(2)/V s at 1.6 K is obtained for the structure without any compensating surface doping. The electron density is controllable down to 7 x 10(9) cm(-2). The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density. (C) 1998 American Institute of Physics. [S0003-6951(98)02214-1].

引用

页码：1745 / 1747

页数：3

共 12 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3900-3907

[2] Transport in gated undoped GaAs/AlxGa1-xAs heterostructures in the high density and high mobility range [J].

Herfort, J ;

Hirayama, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3360-3362

[3] Gate-controlled lateral diodes formed in undoped heterostructure [J].

Hirayama, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10A) :L1245-L1248

[4] Formation of two-dimensional electron and hole gases in undoped AlxGa1-xAs/GaAs heterostructures [J].

Hirayama, Y .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :588-590

[5] HIGH-MOBILITY GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR FOR NANOFABRICATION IN WHICH DOPANT-INDUCED DISORDER IS ELIMINATED [J].

KANE, BE ;

PFEIFFER, LN ;

WEST, KW .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1262-1264

[6] VARIABLE-DENSITY HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES IN A GATED GAAS/ALXGA1-XAS HETEROSTRUCTURE [J].

KANE, BE ;

PFEIFFER, LN ;

WEST, KW ;

HARNETT, CK .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2132-2134

[7] ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES [J].

LUDEKE, R ;

LANDGREN, G .

PHYSICAL REVIEW B, 1986, 33 (08) :5526-5535

[8] ANISOTROPIC MOBILITY AND ROUGHNESS SCATTERING IN A 2D ELECTRON-GAS [J].

MARKUS, Y ;

MEIRAV, U ;

SHTRIKMAN, H ;

LAIKHTMAN, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (07) :1297-1304

[9] HIGH-MOBILITY VARIABLE-DENSITY TWO-DIMENSIONAL ELECTRON-GAS IN INVERTED GAAS-ALGAAS HETEROJUNCTIONS [J].

MEIRAV, U ;

HEIBLUM, M ;

STERN, F .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1268-1270

[10] FERMI-LEVEL PINNING BY VARIOUS METAL SCHOTTKY CONTACTS ON (100)-OMVPE-GROWN N-GAAS [J].

MYBURG, G ;

AURET, FD ;

MEYER, WE ;

BURGER, H .

THIN SOLID FILMS, 1994, 249 (01) :95-99

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