Gate-controlled lateral diodes formed in undoped heterostructure

被引：4

作者：

Hirayama, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 10A期

关键词：

heterostructure; 2DEG; 2DHG; diode; field-effect transistor; mesoscopic structure; AlGaAs; GaAs;

D O I：

10.1143/JJAP.35.L1245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a gate-controlled diode that has a Schottky gate on an undoped heterostructure with n- and p-type ohmic regions at opposite ends of the gate. Either two-dimensional electron or hole gas (2DEG or 2DHG) can be formed at the same heterointerface by an electric field from the surface gate. When this diode is biased in the forward direction, current flow is observed in the two gate voltage ranges corresponding to the formation of 2DEG and 2DHG in the undoped heterostructure. When the drain voltage between the p- and n-type contacts exceeds a certain value, a double injection forms a novel current channel that differs from the conventional 2DEG or 2DHG.

引用

收藏

页码：L1245 / L1248

页数：4

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