THE INTERPRETATION OF OHMIC BEHAVIOR IN SEMI-INSULATING GALLIUM-ARSENIDE SYSTEMS

被引：27

作者：

MANIFACIER, JC ^{[1
]}

HENISCH, HK ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5195 / 5201

页数：7

共 15 条

[1] CURRENT TRANSPORT IN RELAXATION-CASE GAAS [J].

ILEGEMS, M ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1975, 12 (04) :1443-1451

[2] DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI) [J].

INSTONE, T ;

EAVES, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (18) :L771-L775

[3] CURRENT-VOLTAGE CHARACTERISTICS AND DEEP LEVELS IN CHROMIUM-DOPED SEMI-INSULATING GAAS [J].

KITAHARA, K ;

NAKAI, K ;

SHIBATOMI, A ;

OHKAWA, S .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :259-260

[4]

LIN AL, 1976, J APPL PHYS, V47, P1859, DOI 10.1063/1.322905

[5]

MANIFACIER JC, 1978, PHYS REV B, V17, P2648, DOI 10.1103/PhysRevB.17.2648

[6] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS [J].

MANIFACIER, JC ;

HENISCH, HK .

PHYSICAL REVIEW B, 1978, 17 (06) :2640-2647

[7] MINORITY-CARRIER EXCLUSION [J].

MANIFACIER, JC ;

HENISCH, HK .

SOLID-STATE ELECTRONICS, 1979, 22 (03) :279-281

[8] THE CONCEPT OF SCREENING LENGTH IN LIFETIME AND RELAXATION SEMICONDUCTORS [J].

MANIFACIER, JC ;

HENISCH, HK .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (11) :1285-1288

[9] THEORY OF MINORITY-CARRIER INJECTION [J].

MANIFACIER, JC ;

HENISCH, HK ;

GASIOT, J .

PHYSICAL REVIEW LETTERS, 1979, 43 (10) :708-710

[10] LOW FIELD-STUDY OF P+NN+ OR P+PN+ STRUCTURES IN THE FORWARD DIRECTION [J].

MANIFACIER, JC ;

JIMENEZ, J ;

FILLARD, JP ;

HENISCH, HK .

SOLID-STATE ELECTRONICS, 1980, 23 (03) :197-199

← 1 2 →