Very low density two-dimensional hole gas in an inverted GaAs/AlAs interface

被引：12

作者：

Hanein, Y

Shtrikman, H

Meirav, U

机构：

[1] Braun Center for Submicron Research, Weizmann Institute of Science

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The density of the 2DHG is easily and reproducibly varied between 5 x 10(9) and 5 x 10(11) cm(-2). The mobility of the 2DHG is highly anisotropic in the (311)A plane. (C) 1997 American Institute of Physics.

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页码：1426 / 1428

页数：3

相关论文

共 21 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] INTERFACE DISORDER IN ALAS/(AL)GAAS BRAGG REFLECTORS [J].

ASOM, MT ;

GEVA, M ;

LEIBENGUTH, RE ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :976-978

[3] THE GROWTH AND PHYSICS OF HIGH MOBILITY 2-DIMENSIONAL HOLE GASES [J].

DAVIES, AG ;

FROST, JEF ;

RITCHIE, DA ;

PEACOCK, DC ;

NEWBURY, R ;

LINFIELD, EH ;

PEPPER, M ;

JONES, GAC .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :318-322

[4] PROBING THE ANISOTROPIC DISPERSION OF HOLE STATES IN (100) AND (311)A ALAS GAAS ALAS QUANTUM-WELLS [J].

HAYDEN, RK ;

EAVES, L ;

HENINI, M ;

VALADARES, EC ;

KUHN, O ;

MAUDE, DK ;

PORTAL, JC ;

TAKAMASU, T ;

MIURA, N ;

EKENBERG, U .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (03) :298-309

[5] THE GROWTH AND PHYSICS OF ULTRA-HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS ON (311)A GAAS SURFACE [J].

HENINI, M ;

RODGERS, PJ ;

CRUMP, PA ;

GALLAGHER, BL ;

HILL, G .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :451-454

[6] MOLECULAR-BEAM EPITAXIAL GAAS/ALAS SUPERLATTICES IN THE (311)-ORIENTATION [J].

HSU, Y ;

WANG, WI ;

KUAN, TS .

PHYSICAL REVIEW B, 1994, 50 (07) :4973-4975

[7] VARIABLE-DENSITY HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES IN A GATED GAAS/ALXGA1-XAS HETEROSTRUCTURE [J].

KANE, BE ;

PFEIFFER, LN ;

WEST, KW ;

HARNETT, CK .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2132-2134

[8] ORIENTATION DEPENDENT AMPHOTERIC BEHAVIOR OF GROUP-IV IMPURITIES IN THE MOLECULAR-BEAM EPITAXIAL AND VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

LEE, B ;

BOSE, SS ;

KIM, MH ;

REED, AD ;

STILLMAN, GE ;

WANG, WI ;

VINA, L ;

COLTER, PC .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (01) :27-39

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF SILICON-DOPED ALGAAS AND GAAS ON (311)A GAAS SUBSTRATES AND THEIR DEVICE APPLICATIONS [J].

LI, WQ ;

BHATTACHARYA, PK ;

KWOK, SH ;

MERLIN, R .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :3129-3135

[10] ANISOTROPIC MOBILITY AND ROUGHNESS SCATTERING IN A 2D ELECTRON-GAS [J].

MARKUS, Y ;

MEIRAV, U ;

SHTRIKMAN, H ;

LAIKHTMAN, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (07) :1297-1304