Low-energy electron-beam lithography using calixarene

被引：37

作者：

Tilke, A

Vogel, M

Simmel, F

Kriele, A

Blick, RH

Lorenz, H

Wharam, DA

Kotthaus, JP

机构：

[1] Univ Munich, Ctr NanoSci, D-80539 Munich, Germany

[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany

[3] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-energy electron-beam lithography using calixarene as a negative electron resist has been investigated in the energy range between 0.5 and 20 keV. The suitability of electron energies down to 2 keV with a writing resolution of about 10 nm is clearly demonstrated. At low electron energies the required electron dose is drastically reduced. Moreover, irradiation damage during the exposure of a high-mobility two-dimensional electron gas using calixarene plays no significant role in the low-energy regime. (C) 1999 American Vacuum Society. [S0734-211X(99)60804-5].

引用

页码：1594 / 1597

页数：4

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