Structure of recombination-induced stacking faults in high-voltage SiC p-n junctions

被引：175

作者：

Liu, JQ ^{[1
]}

Skowronski, M

Hallin, C

Söderholm, R

Lendenmann, H

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 05期

关键词：

D O I：

10.1063/1.1446212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p-n(-) diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 10(3) and 10(4) cm(-1). All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3<1-100>-type. (C) 2001 American Institute of Physics.

引用

页码：749 / 751

页数：3

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