Atomic structure of the surface reconstructions of zincblende GaN(001)

被引：15

作者：

Wassermeier, M

Yamada, A

Yang, H

Brandt, O

Behrend, J

Ploog, KH

机构：

[1] Paul-Drude-Inst. Festkorperehktronik, D-10117 Berlin

[2] Tokyo Institute of Technology, Tokyo 152, 2-12-1 O-okayama, Meguro-ku

[3] Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Chinese Academy of Science, Beijing 1000083

[4] Swiss Fed. Institute of Technology, IMO-EPFL

来源：

SURFACE SCIENCE | 1997年 / 385卷 / 01期

关键词：

gallium nitride; low index single crystal surfaces; molecular beam epitaxy; scanning tunneling microscopy; single crystal surfaces; surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(97)00259-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunneling microscopy and reflection high energy electron diffraction, we study the surface reconstructions of zincblende GaN(001) prepared by molecular beam epitaxy on GaAs(001). We observe a (2 x 2) and a (root 10 x root 10)R18.4 degrees reconstruction at a Ga coverage of 0.5 and 0.8 monolayers, respectively. Local density map calculations of the highest occupied and lowest unoccupied molecular orbitals for the experimentally deduced structure models based on Ga dimer formation show excellent agreement with the filled and empty state STM images, respectively. (C) 1997 Elsevier Science B.V.

引用

页码：178 / 186

页数：9

共 35 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].