Structure and properties of TiAlLaN films deposited at various bias voltages

被引:30
作者
Du, Hao [1 ]
Xiong, Ji [1 ]
Zhao, Haibo [2 ]
Wu, Yuemei [3 ]
Wan, Weicai [1 ]
Wang, Linlin [1 ]
机构
[1] Sichuan Univ, Sch Mfg Sci & Engn, Chengdu 610065, Peoples R China
[2] Sichuan Univ, Anal & Testing Ctr, Chengdu 610065, Peoples R China
[3] Chengdu Aeronaut Vocat & Tech Coll, Aviat Maintenance Engn Dept, Chengdu 610100, Peoples R China
关键词
TiAlLaN film; Bias voltage; Properties; Oxidation resistance; DRY MACHINING CONDITIONS; HIGH-SPEED STEEL; MECHANICAL-PROPERTIES; SUBSTRATE BIAS; VACUUM-ARC; COATINGS; MICROSTRUCTURE; OXIDATION; DC;
D O I
10.1016/j.apsusc.2013.12.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070305 [高分子化学与物理];
摘要
The TiAlLaN films were deposited on YG8 and silicon (1 1 1) substrates by a hybrid PVD coater which is combined with medium frequency reactive magnetron sputtering and ion-plating evaporation. The effects of lanthanum addition and bias voltages on the composition, crystal morphology, microstructure, mechanical properties, and oxidation resistance of the TiAlLaN films were investigated systematically. With lanthanum addition in the TiAlN film, the crystal morphology changed from columnar to equiaxial, and the grain refinement accompanied by the increase of hardness and elastic modulus was found. The indentation adhesion test showed that the adhesion strength was deteriorated by adding lanthanum in the deposited film; however, the scratch adhesion test expressed a better morphology of the scratch track line for the TiAlLaN film. With the substrate bias increasing, the elements concentration of films were alternated, and the equiaxial crystals were turned to columnar crystals. The oxidation resistance of the deposited films increased with the increase of bias voltage. The adhesion qualities, which are affected by the increasing hardness and elastic modulus, were worse for the TiAlLaN films under higher bias voltages. The TiAlLaN film under the bias of 10 V showed the highest HIE ratio. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:688 / 694
页数:7
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