Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

被引：86

作者：

Chen, ZH ^{[1
]}

Kim, ET

Madhukar, A

机构：

[1] Univ So Calif, Dept Mat Sci, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of electron intraband absorption based middle- (similar to5.6 mum) and long- (similar to10 mum) wavelength infrared (IR) photoresponse for normally incident radiation on InGaAs-capped GaAs(001)/InAs quantum dots (QDs) in a n-i(QD)-n structure. The relative photoresponse in this dual-wavelength structure is tunable up to two orders of magnitude with bias. The full width at half maximum of the long-wavelength IR intraband photocurrent peak at 80 K is as narrow as 8.2 meV. (C) 2002 American Institute of Physics.

引用

页码：2490 / 2492

页数：3

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