Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

被引：40

作者：

Stiff-Roberts, AD ^{[1
]}

Chakrabarti, S ^{[1
]}

Pradhan, S ^{[1
]}

Kochman, B ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1476387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing multiple layers of InAs/GaAs self-organized quantum dots, were grown by molecular-beam epitaxy. Individual devices have been operated at temperatures as high as 150 K and, at 100 K, are characterized by lambda(peak)=3.72 mum, J(dark)=6x10(-10) A/cm(2) for a bias of 0.1 V, and D*=2.94x10(9) cm Hz(1/2)/W at a bias of 0.2 V. Raster-scan images of heated objects and infrared light sources were obtained with a small (13x13) interconnected array of detectors (to increase the photocurrent) at 80 K. (C) 2002 American Institute of Physics.

引用

页码：3265 / 3267

页数：3

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