Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

被引：162

作者：

Stiff, AD ^{[1
]}

Krishna, S

Bhattacharya, P

Kennerly, SW

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] USA, Res Labs, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 11期

关键词：

D O I：

10.1109/3.958360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity approximate to3 x 10(9) cmHz(1/2)/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

引用

页码：1412 / 1419

页数：8

共 31 条

[1] PHOTOCONDUCTIVE GAIN AND GENERATION-RECOMBINATION NOISE IN MULTIPLE-QUANTUM-WELL INFRARED DETECTORS [J].

BECK, WA .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3589-3591

[2] Mid-infrared photoconductivity in InAs quantum dots [J].

Berryman, KW ;

Lyon, SA ;

Segev, M .

APPLIED PHYSICS LETTERS, 1997, 70 (14) :1861-1863

[3] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J].

Chu, L ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (23) :3599-3601

[4]

Gunapala S. D., 1995, THIN FILMS, V21, P113

[5] Quantum dot infrared photodetector using modulation doped InAs self-assembled quantum dots [J].

Horiguchi, N ;

Futatsugi, T ;

Nakata, Y ;

Yokoyama, N ;

Mankad, T ;

Petroff, PM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2559-2561

[6] Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector [J].

Kim, S ;

Mohseni, H ;

Erdtmann, M ;

Michel, E ;

Jelen, C ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :963-965

[7] Quantum capture times at room temperature in high-speed In0.4Ga0.6As-GaAs self-organized quantum-dot lasers [J].

Klotzkin, D ;

Kamath, K ;

Bhattacharya, P .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (10) :1301-1303

[8] Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots [J].

Krishna, S ;

Linder, K ;

Bhattacharya, P .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4691-4693

[9] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].

Lee, SW ;

Hirakawa, K ;

Shimada, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430

[10] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

← 1 2 3 4 →